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AP9916H/J Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25m 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=125 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 110 Unit /W /W Data and specifications subject to change without notice 200227032 AP9916H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 18 0.5 - Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112 Max. Units 25 40 1 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= 12V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.3,VGS=5V RD=0.56 VGS=0V VDS=18V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 35 90 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=35A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9916H/J 100 80 T C =25 o C V G =4.5V 80 70 T C =150 o C V G =4.5V 60 ID , Drain Current (A) ID , Drain Current (A) V G =3.5V 60 V G =3.5V 50 40 40 V G =2.5V V G =2.5V 30 20 20 10 V G =1.5V V G =1.5V 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.8 I D= 6 A 28 I D =6A 1.6 T C =25 C 1.4 o V G =4.5V 26 Normalized R DS(ON) RDS(ON) (m ) 24 1.2 22 1.0 20 0.8 18 1 2 3 0.6 V GS (V) 4 5 6 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9916H/J 40 60 35 50 30 ID , Drain Current (A) 40 25 20 PD (W) 25 50 75 100 125 150 30 15 20 10 10 5 0 0 0 T c , Case Temperature ( C) o T c , Case Temperature ( o C) 50 100 150 Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 100 10us Normalized Thermal Response (R thjc) DUTY=0.5 0.2 ID (A) 10 100us 1ms 10ms 100ms 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 1 T c =25 o C Single Pulse 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9916H/J 16 1000 f=1.0MHz 14 I D =18A V DS =10V V DS =15V V DS =18V Ciss VGS , Gate to Source Voltage (V) 12 Coss 10 8 C (pF) 100 Crss 6 4 2 0 0 5 10 15 20 25 30 35 40 45 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.2 10 0.95 T j =150 C o 1 VGS(th) (V) 1.2 1.6 T j =25 o C IS (A) 0.7 0.1 0.45 0.01 0 0.4 0.8 0.2 -50 V SD (V) T j , Junction Temperature ( o C ) 0 50 100 150 Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9916H/J RD VDS 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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